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Giant Magneto Resistive Position Sensor
Version 1.0 Data Sheet
GMR B6
This angle sensor is based on the Giant Magneto Resistive (GMR) technology. It is outstanding for the huge tolerances it offers to the user in assembly.
2.6 max 10 max
Features * GMR sensor in SMD package * Sensitive to the direction, not to the intensity of the magnetic field * Constant TC of basic resistance R and magneto resistance R Applications * Rotation and linear sensing with large airgaps * Angle encoders * Contactless potentiometers * Incremental encoders Pin Configuration
6 3
B
2.9 0.1 1.9 0.6 +0.1 -0.05 6 5 4
2 ... 30 1.1 max 0.08 ... 0.15
0.1 0.3
A
10 max
0.1 max
M
1
2
3 0.2
0.35 0.15
0.3 -0.05
+0.1
0.25
M
B
0.20
A
Reflow soldering 0.8 0.3
Directions of internal
1.2 3
1
4
R1
R3
0.5 0.45
Dimensions in mm
0.9
R2
R4
magnetization
GPW06957
2/5
OHS00429
6, 3 5 (= 2) 1, 4 Type
x GMR B6
supply ground GMR bridge access Marking B Ordering Code Q62705-K5004
x new type
Data Sheet
1
1999-04-01
1.3 0.1
GMR B6
The GMR B6 is an angle sensor based on sputtered metallic multilayer technology. 4 resistors are monolithically integrated on 1 chip. They can be used as a fullbridge or, if 2 external resistors are added, as 2 halfbridges. The outstanding feature of this magnetic sensor is the fact, that it is sensitive to the orientation of the magnetic field and not to its intensity as long as the field is in a range between 5 ... 15 kA/m. This means, the signal output of this sensor is independent of the sensor position relative to the magnet in lateral, axial or rotational direction in the range of several millimeters. Optimum results are achieved by using magnetic targets like permanent magnets or magnetic pole-wheels. There is no need for a biasing magnet! Due to the linear change of both, basic and field dependent part of the resistance vs. temperature, simple and efficient electronic compensation of TC (R, R) is possible.
Resistance Rotating Magnet
N
S
GMR Sensor 0 Principle of operation 180 360 Angle
OHS00375
Output signal vs orientation of magnet R = R 0 + 0.5 * R * (1-cos )
Figure 1
Data Sheet
2
1999-04-01
GMR B6
Maximum Ratings Parameter Operating temperature Storage temperature Supply voltage Thermal conductivity Magnetic field 1)
1)
Symbol
Value - 40 ... + 150 - 50 ... + 150 7 >4 < 15
Unit C C V mW/K kA/m
TA Tstg V1 GthC A Hrot
larger fields may reduce the magnetoresistive effect irreversibly
Characteristics (TA = 25 C) Parameter Nominal supply voltage Basic resistance Magnetoresistive effect Hrot = 5 ... 15 kA/m Output signal fullbridge Offset voltage Temperature coefficient of basic resistance Temperature coefficient of magnetoresistance Temperature coefficient of magnetoresistive effect Hysteresis at Hrot = 10 kA/m Application Hints The application mode of the GMR position sensor is preferably as a bridge or halfbridge circuit. In every case this type of circuit compensates for the TC of the resistance value R0. To compensate for the TC of the GMR effect R/R0, if there is the necessity, is left to the application circuit and can be done for example with a NIC circuit. When operated over a complete 360 turn, a total signal of 20 mV/V is achieved at 25 C with a halfbridge. The output signal is doubled to of 40 mV/V when a fullbridge circuit is used. In the case of linear position sensing, the electrical circuit remains unchanged. Symbol Value 5 > 700 >4 > 40 <4 + 0.09 ... + 0.12 - 0.12 ... - 0.09 - 0.27 ... - 0.23 <2 Unit V % mV/V mV/V %/K %/K %/K degrees
V1N R0
R/R0
VOUT
|V0|
TCR0 TCR TCR/R0 Hys
Data Sheet
3
1999-04-01

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